N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB
Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Product overview: IRF3703PBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75A, 30V, 0.0039ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75A, 30V, 0.0039ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3703PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 069267-IRF3703PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Family Name: IRF3703
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 210A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 209nC @ 10V
Max Input Capacitance: 8250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 76A, 10V
Alternative Parts (Cross-Reference): IRF3703; PSMN003-30P; FDP8030L_Q;
Introduction Date: February 02, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.3Milliohms;ID 210A;TO-220AB;PD 230W;-55de
MOSFET N-CH 30V 210A TO220AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF3703PBF-ND | 278-IRF3703PBF | 069267-IRF3703PBF | 70017482 | IRF3703PBF |
| Product Name | Single FETs, MOSFETs | N-Channel 75A 30V 0.0039ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3703PBF | MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.3Milliohms;ID 210A;TO-220AB;PD 230W;-55de | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220 | TO-220; TO-220-3 | |
| PD | 230000 milliwatts | 3800 to 230000 milliwatts | 230000 milliwatts | ||
| V(BR)DSS | 30 volts | 30 volts |
