MOSFET N-CH 200V 182A TO247AC Product overview: IRF200P222 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 182A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 182A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF200P222 can be used for catalog matching and distributor lookup.
N-Channel 200V 182A (Tc) 556W (Tc) Through Hole TO-247AC
MOSFET N-CH 200V 182A TO247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 874997-IRF200P222
Series: StrongIRFET™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 200 V 182A (Tc) 556W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: IRF200
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Limited
Quantity per package: 25
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 200V 182A TO247AC
MOSFET, N-CH, 200V, 182A, 175DEG C, 556W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:182A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF200P222 | 448-IRF200P222-ND | IRF200P222 | 874997-IRF200P222 | IRF200P222 | IRF200P222 | 93AC7142 |
| Product Name | 200V 182A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF200P222 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 182A, 175Deg C, 556W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| Transconductance | 0.1420 kS | ||||||
| PD | 556 milliwatts | 556000 milliwatts |
