Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3707ZSPBF IRF3707ZSPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046467-IRF3707ZSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 25μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1210pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

N-Channel 30V 59A (Tc) 57W (Tc) Surface Mount D2PAK

MOSFET N-CH 30V 59A D2PAK Product overview: IRF3707ZSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 59A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3707ZSPBF can be used for catalog matching and distributor lookup.