N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK
N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK
N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK
MOSFET N-CH 60V 79A D2PAK Product overview: IRF1018ESTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 79A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 79A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1018ESTRLPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017409-IRF1018ESTRLP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: IRF1018ES
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 79A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 2290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 47A, 10V
Alternative Parts (Cross-Reference): STB60N55F3; 2SK3354-ZJ; 2SK3354-ZJ-E1;
Introduction Date: June 15, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
MOSFET, N-CH, 60V, 79A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 79A D2PAK
MOSFET N-CH 60V 79A D2PAK
| DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF1018ESTRLPBFTR-ND | 2579268 | 278-IRF1018ESTRLPBF | 017409-IRF1018ESTRLPBF | IRF1018ESTRLPBF | 43AC3282 | IRF1018ESTRLPBF | IRF1018ESTRLPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | 60V 79A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1018ESTRLPBF | MOSFET | Mosfet, N-Ch, 60V, 79A, To-263-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-220; TO-220 | Tape & Reel (TR) | TO-263; SOT3; D2PAK | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 110 milliwatts | 110000 milliwatts | 110000 milliwatts |
