Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204LPBF IRF2204LPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046417-IRF2204LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 170A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5890pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 130A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046417-IRF2204LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 170A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5890pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 130A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204LPBF - 1046417-IRF2204LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204LPBF
1046417-IRF2204LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204LPBF 1046417-IRF2204LPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046417-IRF2204LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 170A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5890pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 130A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1046417-IRF2204LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 170A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 5890pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 130A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRF2204LPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF2204LPBF-ND
Single FETs, MOSFETs IRF2204LPBF-ND
N-Channel 40V 170A (Tc) 200W (Tc) Through Hole TO-262

N-Channel 40V 170A (Tc) 200W (Tc) Through Hole TO-262

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF2204LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF2204LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF2204LPBF
MOSFET N-CH 40V 170A TO262

MOSFET N-CH 40V 170A TO262

Supplier's Site
MOSFET N-CH 40V 170A TO-262 - 376-IRF2204LPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 40V 170A TO-262
376-IRF2204LPBF
MOSFET N-CH 40V 170A TO-262 376-IRF2204LPBF
MOSFET N-CH 40V 170A TO-262

MOSFET N-CH 40V 170A TO-262

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046417-IRF2204LPBF IRF2204LPBF-ND IRF2204LPBF 376-IRF2204LPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204LPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 40V 170A TO-262
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 200000 milliwatts 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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