Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EZPBF IRF1010EZPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 040671-IRF1010EZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRF1010EZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 2810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 51A, 10V Alternative Parts (Cross-Reference): IRF1010EZ; FDP5645-Q; HRF3205; AOT2608L; Introduction Date: June 29, 2004 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EZPBF - 040671-IRF1010EZPBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 8312783 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1655778 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRF1010EZPBF-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IRF1010EZPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • N Channel Mosfet, 60V, 75A To-220Ab; Channel Type Infineon - 63J7168 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistor - 66776646 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF1010EZPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg - 70016935 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 040671-IRF1010EZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRF1010EZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 2810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 51A, 10V Alternative Parts (Cross-Reference): IRF1010EZ; FDP5645-Q; HRF3205; AOT2608L; Introduction Date: June 29, 2004 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EZPBF - 040671-IRF1010EZPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EZPBF
040671-IRF1010EZPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EZPBF 040671-IRF1010EZPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040671-IRF1010EZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: IRF1010EZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 2810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 51A, 10V Alternative Parts (Cross-Reference): IRF1010EZ; FDP5645-Q; HRF3205; AOT2608L; Introduction Date: June 29, 2004 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 040671-IRF1010EZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: IRF1010EZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 2810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 51A, 10V
Alternative Parts (Cross-Reference): IRF1010EZ; FDP5645-Q; HRF3205; AOT2608L;
Introduction Date: June 29, 2004
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
60V 75A MOSFET Transistor
278-IRF1010EZPBF
60V 75A MOSFET Transistor 278-IRF1010EZPBF
MOSFET N-CH 60V 75A TO220AB Product overview: IRF1010EZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1010EZPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 75A TO220AB Product overview: IRF1010EZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1010EZPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 8312783 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8312783
MOSFETs 8312783
HEXFET N-Ch MOSFET 84A 60V TO-220AB

HEXFET N-Ch MOSFET 84A 60V TO-220AB

Supplier's Site
MOSFETs - 1655778 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1655778
MOSFETs 1655778
HEXFET N-Ch MOSFET 84A 60V TO-220AB

HEXFET N-Ch MOSFET 84A 60V TO-220AB

Supplier's Site
Single FETs, MOSFETs - IRF1010EZPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF1010EZPBF-ND
Single FETs, MOSFETs IRF1010EZPBF-ND
N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-220AB

N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - IRF1010EZPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF1010EZPBF
Single FETs, MOSFETs IRF1010EZPBF
MOSFET N-CH 60V 75A TO220AB

MOSFET N-CH 60V 75A TO220AB

Supplier's Site Datasheet
N Channel Mosfet, 60V, 75A To-220Ab; Channel Type Infineon - 63J7168 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 75A To-220Ab; Channel Type Infineon
63J7168
N Channel Mosfet, 60V, 75A To-220Ab; Channel Type Infineon 63J7168
N CHANNEL MOSFET, 60V, 75A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 75A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Transistor - 66776646 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66776646
Transistor 66776646
POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.0085OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.0085OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF1010EZPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF1010EZPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF1010EZPBF
MOSFET N-CH 60V 75A TO220AB

MOSFET N-CH 60V 75A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg - 70016935 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
70016935
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg 70016935
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRF1010EZPBF
MOSFET IRF1010EZPBF
MOSFET MOSFT 60V 84A 8.5mOhm 58nC

MOSFET MOSFT 60V 84A 8.5mOhm 58nC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 040671-IRF1010EZPBF 278-IRF1010EZPBF 8312783 IRF1010EZPBF-ND IRF1010EZPBF 63J7168 66776646 IRF1010EZPBF 70016935 IRF1010EZPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EZPBF 60V 75A MOSFET Transistor MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 60V, 75A To-220Ab; Channel Type Infineon Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts 60 volts
PD 140000 milliwatts 140 milliwatts 140000 milliwatts 140000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; To-220ab TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3 TO-220
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