Manufacturer: Infineon Technologies
Win Source Part Number: 777010-IRF3205STRRPB
Series: HEXFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Family Name: IRF3205
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 146nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3247pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 200W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 62A, 10V
Alternative Parts (Cross-Reference): NP60N055KUG-E2; BUK9614-55A,118; NP82N055KHE-E1-AY; NP60N055KUG-E2-AZ;
Introduction Date: March 11, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK
MOSFET N-CH 55V 110A D2PAK
MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 777010-IRF3205STRRPBF | IRF3205STRRPBF-ND | IRF3205STRRPBF | IRF3205STRRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205STRRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 200000 milliwatts |
