MOSFET N-CH 24V 195A TO220AB
MOSFET N-Channel 24V 353A HEXFET TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1046401-IRF1324PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 7590pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 mOhm @ 195A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
N-Channel 24V 195A (Tc) 300W (Tc) Through Hole TO-220AB
MOSFET N-CH 24V 195A TO220AB Product overview: IRF1324PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 24V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1324PBF can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 195 A, 24 V, 0.0012 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET MOSFT 24V 353A 1.5mOhm 160nC Qg
MOSFET N-CH 24V 195A TO220AB
MOSFET N-CH 24V 195A TO220AB
| ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF1324PBF | 6886807 | 1046401-IRF1324PBF | 448-IRF1324PBF-ND | 278-IRF1324PBF | 10R3473 | IRF1324PBF | 376-IRF1324PBF | IRF1324PBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1324PBF | Single FETs, MOSFETs | 24V 195A MOSFET Transistor | Mosfet Transistor, N Channel, 195 A, 24 V, 0.0012 Ohm, 10 V, 4 V Rohs Compliant Infineon | MOSFET | MOSFET N-CH 24V 195A TO220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 24 volts | 24 volts | 24 volts | 24 volts | |||||
| IDSS | 195000 milliamps | ||||||||
| PD | 300000 milliwatts | 300000 milliwatts | 300 milliwatts | 300000 milliwatts |
