The IRF1407PbF is a HEXFET® N-channel power MOSFET designed for industrial motor drive applications, housed in a TO-220AB package. It features a drain-to-source voltage rating of 75 V, a continuous drain current of 130 A at 25°C, and an absolute maximum pulsed drain current of 520 A. The device has an ultra-low on-resistance of 0.0078 Ω at VGS = 10 V and ID = 78 A, with a 175°C maximum junction operating temperature. It supports repetitive avalanche energy up to Tjmax and has a peak diode recovery dv/dt rating of 4.6 V/ns. Thermal resistance junction-to-case is 0.45 °C/W, and junction-to-ambient is 62 °C/W. The device meets RoHS standards and is qualified for industrial use.
N CHANNEL MOSFET, 75V, 130A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 27AC6861 |
| Product Name | N Channel Mosfet, 75V, 130A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel |