Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 Product overview: IRF350 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF350 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 069266-IRF350
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 143W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 87A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 2150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.2 mOhm @ 52A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 400V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF350 | 069266-IRF350 | 17416015 |
| Product Name | 400V 14A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF350 | Transistor |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 400 volts | 40 volts | |
| PD | 150000 milliwatts | 143000 milliwatts | |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
