The Infineon N Channel MOSFET transistor is rated for a continuous drain current of 100 A and a maximum drain-to-source voltage of 75 V. It features an ultra-low on-resistance of 7.8 mΩ at a gate-to-source voltage of 10 V, making it suitable for high-efficiency applications. The device can handle a maximum power dissipation of 200 W at a case temperature of 25°C, with a thermal resistance of 0.75°C/W from junction to case. It operates effectively in a temperature range from -55°C to +175°C and is RoHS compliant. The transistor is packaged in a D2Pak format, which is designed for high current applications and provides low internal connection resistance. The device also supports fast switching speeds and has a peak diode recovery dv/dt rating of 4.6 V/ns. This MOSFET is ideal for applications requiring robust performance and reliability.
MOSFET N-Channel HEXFET 75V 100A D2PAK
MOSFET N-Channel HEXFET 75V 100A D2PAK
MOSFET N-Channel HEXFET 75V 100A D2PAK
MOSFET N-CH 75V 100A D2PAK Product overview: IRF1407STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1407STRLPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 015749-IRF1407STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Family Name: IRF1407
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 5600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 78A, 10V
Alternative Parts (Cross-Reference): SUM90N08-7M6P-E3; NP88N075EUE-E2-AY; NP88N075EUE;
Introduction Date: June 30, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
N-Channel 75V 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
N-Channel 75V 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
MOSFET Transistor, N Channel, 100 A, 75 V, 7.8 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 75V 100A D2PAK
MOSFET MOSFT 75V 100A 7.8mOhm 160nC
MOSFET N-CH 75V 100A D2PAK
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 9075179P | 9075179 | 278-IRF1407STRLPBF | 015749-IRF1407STRLPBF | IRF1407STRLPBFCT-ND | 25M9800 | IRF1407STRLPBF | IRF1407STRLPBF | IRF1407STRLPBF |
| Product Name | MOSFETs | MOSFETs | 75V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1407STRLPBF | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 100 A, 75 V, 7.8 Mohm, 10 V, 4 V Rohs Compliant Infineon | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-263; TO-263 | TO-263; D2pak (to-263) | Tape & Reel (TR) | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Number of units in IC | 1 | ||||||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts |
