MOSFET N-CH 55V 135A D2PAK Product overview: IRF2805STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 135A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 135A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2805STRLPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046420-IRF2805STRLP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 135A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 230nC @ 10V
Max Input Capacitance: 5110pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 104A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2PAK
N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2PAK
N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2PAK
MOSFET N-CH 55V 135A D2PAK
MOSFET, N-CH, 55V, 135A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 55V 135A D2PAK
MOSFET MOSFT 55V 135A 4.7mOhm 150nC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF2805STRLPBF | 1046420-IRF2805STRLPBF | IRF2805STRLPBFTR-ND | IRF2805STRLPBF | 49AC0320 | IRF2805STRLPBF | IRF2805STRLPBF |
| Product Name | 55V 135A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2805STRLPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 55V, 135A, To-263; Transistor Polarity Infineon | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | ||||
| Transconductance | 0.0910 kS | ||||||
| PD | 200 milliwatts | 200000 milliwatts | 200000 milliwatts |
