Infineon Technologies AG N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon IRF1405PBF.

Description
N CHANNEL MOSFET, 55V, 169A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:169A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
Description
N CHANNEL MOSFET, 55V, 169A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:169A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The IRF1405PbF is a N-channel HEXFET® power MOSFET in a TO-220AB package, designed for industrial motor drive and other high-current applications. It has a drain-to-source voltage rating of 55 V and a continuous drain current of 169 A at 25°C case temperature, with a pulsed drain current capability of 680 A. The device features an ultra-low on-resistance of 5.3 mΩ at V GS = 10 V and I D = 101 A, a 175°C maximum junction operating temperature, and supports repetitive avalanche energy up to Tjmax. The package is not recommended for surface mount applications. It is lead-free, meets RoHS standards, and is qualified for industrial use but not automotive applications.

Datasheet Summary
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The IRF1405PbF is a N-channel HEXFET® power MOSFET in a TO-220AB package, designed for industrial motor drive and other high-current applications. It has a drain-to-source voltage rating of 55 V and a continuous drain current of 169 A at 25°C case temperature, with a pulsed drain current capability of 680 A. The device features an ultra-low on-resistance of 5.3 mΩ at V GS = 10 V and I D = 101 A, a 175°C maximum junction operating temperature, and supports repetitive avalanche energy up to Tjmax. The package is not recommended for surface mount applications. It is lead-free, meets RoHS standards, and is qualified for industrial use but not automotive applications.

Suppliers

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Supplier Links
N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon - 29AC7069 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon
29AC7069
N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon 29AC7069
N CHANNEL MOSFET, 55V, 169A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:169A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 55V, 169A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:169A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 29AC7069
Product Name N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon
Polarity N-Channel
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