The IRF1405PbF is a N-channel HEXFET® power MOSFET in a TO-220AB package, designed for industrial motor drive and other high-current applications. It has a drain-to-source voltage rating of 55 V and a continuous drain current of 169 A at 25°C case temperature, with a pulsed drain current capability of 680 A. The device features an ultra-low on-resistance of 5.3 mΩ at V GS = 10 V and I D = 101 A, a 175°C maximum junction operating temperature, and supports repetitive avalanche energy up to Tjmax. The package is not recommended for surface mount applications. It is lead-free, meets RoHS standards, and is qualified for industrial use but not automotive applications.
N CHANNEL MOSFET, 55V, 169A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:169A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 29AC7069 |
| Product Name | N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel |
