MOSFET N-CH 40V 75A TO220AB
MOSFET N-CH 40V 75A TO220AB Product overview: IRF2804PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2804PBF can be used for catalog matching and distributor lookup.
N-Channel 40V 75A (Tc) 300W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069249-IRF2804PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRF2804
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 6450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): BUK953R2-40B; BUK953R2-40B,127; IXTP300N04T2; IXTP270N04T4;
Introduction Date: August 25, 2005
ECCN: EAR99
Country of Origin: China, Germany, Mexico, Philippines, Republic of Korea, Taiwan, United Kingdom
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:
MOSFET, N-CH, 40V, 280A, 175DEG C, 330W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:280A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 40V 75A TO220AB
MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Allied Electronics, Inc. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 7165558 | 7165558P | IRF2804PBF | 278-IRF2804PBF | IRF2804PBF-ND | 069249-IRF2804PBF | 70016946 | 33X8392 | IRF2804PBF | IRF2804PBF |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | 40V 75A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2804PBF | MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-220AB;PD 330W;-55de | Mosfet, N-Ch, 40V, 280A, 175Deg C, 330W; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Package Type | TO-220; To-220 | TO-220; TO-220 | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220 | TO-3 | TO-220; TO-220-3 | |
| Number of units in IC | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
