Infineon Technologies AG Single FETs, MOSFETs IRF3205SPBF

Description
N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - IRF3205SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3205SPBF-ND
Single FETs, MOSFETs IRF3205SPBF-ND
N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK

N-Channel 55V 110A (Tc) 200W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205SPBF - 015758-IRF3205SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205SPBF
015758-IRF3205SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205SPBF 015758-IRF3205SPBF
Manufacturer: Infineon Technologies Win Source Part Number: 015758-IRF3205SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 3247pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 62A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 015758-IRF3205SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 146nC @ 10V
Max Input Capacitance: 3247pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 62A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3205SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3205SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3205SPBF
MOSFET N-CH 55V 110A D2PAK

MOSFET N-CH 55V 110A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF3205SPBF-ND 015758-IRF3205SPBF IRF3205SPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205SPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 55 volts
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