MOSFET N-CH 40V 162A TO262 Product overview: IRF1404LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 162A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 162A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1404LPBF can be used for catalog matching and distributor lookup.
N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
Manufacturer: Infineon Technologies
Win Source Part Number: 017413-IRF1404LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 162A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 7360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 95A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
MOSFET N-CH 40V 162A TO262
MOSFET MOSFT 40V 162A 4mOhm 160nC
MOSFET N-CH 40V 162A TO262
MOSFET, N-CH, 40V, 162A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF1404LPBF | IRF1404LPBF-ND | 017413-IRF1404LPBF | IRF1404LPBF | IRF1404LPBF | IRF1404LPBF | 91Y4724 |
| Product Name | 40V 162A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404LPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 162A, To-262-3; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| PD | 200 milliwatts | 3800 to 200000 milliwatts | 3800 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
