MOSFET N-CH 75V 142A TO220AB
N-Channel 75V 142A (Tc) 380W (Tc) Through Hole TO-220AB
MOSFET N-CH 75V 142A TO220AB Product overview: IRF1607PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 142A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 142A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1607PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 040674-IRF1607PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 142A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 320nC @ 10V
Max Input Capacitance: 7750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 85A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20
MOSFET N-CH 75V 142A TO-220AB
MOSFET MOSFT 75V 142A 7.5mOhm 210nC
MOSFET N-CH 75V 142A TO220AB
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Allied Electronics, Inc. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF1607PBF | IRF1607PBF-ND | 278-IRF1607PBF | 040674-IRF1607PBF | 70017532 | 376-IRF1607PBF | IRF1607PBF | IRF1607PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 75V 142A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1607PBF | MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0058Ohm;ID 142A;TO-220AB;PD 380W;VGS +/-20 | MOSFET N-CH 75V 142A TO-220AB | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | 75 volts | ||||
| IDSS | 142000 milliamps | |||||||
| PD | 380000 milliwatts | 380000 milliwatts | 380000 milliwatts | 380000 milliwatts | 380000 milliwatts |
