The IRF2804PbF is a HEXFET® N-channel MOSFET designed for high-current switching applications, featuring a 40V drain-to-source voltage rating and a package-limited continuous drain current of 75A at 25°C case temperature. It is housed in a TO-220AB package with a maximum junction temperature of 175°C and an on-resistance of up to 2.3mΩ at 10V gate-source voltage. The device supports repetitive avalanche energy operation up to the maximum junction temperature and complies with RoHS standards. Thermal resistance from junction to case is 0.50°C/W, and junction-to-ambient thermal resistance is 62°C/W in standard mounting conditions.
N CHANNEL MOSFET, 40V, 270A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 27AC6864 |
| Product Name | N Channel Mosfet, 40V, 270A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel |
