Manufacturer: Infineon Technologies
Win Source Part Number: 092701-IRF1010EPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: IRF1010
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 84A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 3210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): STP60NE06-16; HUFA76439P3; BUK9515-60E,127;
Introduction Date: February 02, 2004
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 84A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET N-CH 60V 84A TO220AB Product overview: IRF1010EPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 84A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 84A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1010EPBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 60V, 84A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
MOSFET N-CH 60V 84A TO220AB
MOSFET N-CH 60V 84A TO220AB
MOSFET MOSFT 60V 81A 12mOhm 86.6nC
| Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Allied Electronics, Inc. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 092701-IRF1010EPBF | 5411714 | IRF1010EPBF-ND | 278-IRF1010EPBF | 63J7165 | 70016934 | IRF1010EPBF | IRF1010EPBF | IRF1010EPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1010EPBF | MOSFETs | Single FETs, MOSFETs | 60V 84A MOSFET Transistor | N Channel Mosfet, 60V, 84A To-220Ab; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| PD | 200000 milliwatts | 200 milliwatts | 200000 milliwatts | 200000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-220; TO-220-3 | Tube | TO-3; TO-220 | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 |
