MOSFET N-CH 55V 169A TO220AB Product overview: IRF1405PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 169A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 169A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1405PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 55V 169A TO220AB
N-Channel 55V 169A (Tc) 330W (Tc) Through Hole TO-220AB
MOSFET N-Channel 55V 169A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017415-IRF1405PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Family Name: IRF1405
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 169A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 5480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.3 mOhm @ 101A, 10V
Alternative Parts (Cross-Reference): BUK9506-55B,127; BUK654R6-55C,127; BUK9506-55B; BUK9508-55B,127;
Introduction Date: February 02, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
MOSFET MOSFT 55V 133A 5.3mOhm 170nC
N CHANNEL MOSFET, 55V, 169A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:169A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
55V 169A 330W 5.3mΩ@10V,101A 4V@250uA N Channel TO-220AB MOSFETs ROHS
N CHANNEL MOSFET, 55V, 169A, TO-220AB; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:55V; CONTINUOUS DRAIN CURRENT ID:169A; ON RESISTANCE RDS(ON):0.0053OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 169A;TO-220AB;PD 330W;-55de
MOSFET N-CH 55V 169A TO220AB
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Radwell International | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF1405PBF | IRF1405PBF | IRF1405PBF-ND | 5431099P | 5431099 | 017415-IRF1405PBF | IRF1405PBF | 63J7195 | IRF1405PBF | 66776702 | 70016942 | IRF1405PBF |
| Product Name | 55V 169A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1405PBF | MOSFET | N Channel Mosfet, 55V, 169A, To-220Ab; Channel Type Infineon | Triode/MOS Tube/Transistor >> MOSFETs | Transistor | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 169A;TO-220AB;PD 330W;-55de | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | 55 volts | |||||||
| PD | 330 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
