Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF240 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line | |
| 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF340 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line | |
| IR2110L4 - A IR2110L4 with Standard Packaging Features Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from... | |
| 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 Package Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt... | |
| 150 V single N-channel OptiMOS™ MOSFET in DirectFET™ package The IRF150DM115 is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design... | |
| 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard... | |
| 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 Package Summary of Features Very low RDS(on) Excellent gate charge x RDS(on) (FOM) Optimized Qrr 175°C operating temperature... | |
| 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | |
| 40V Single N-Channel Power MOSFET in a TO-220 package Summary of Features Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Industry standard through-hole power package... | |
| 55V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| IR MOSFET 100 V in a D²PAK package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| IR MOSFET 55 V in a D²PAK package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package The IQE220N15NM5CG is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down... | |
| OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package The IQE220N15NM5 is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology... | |
| OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with benchmark RDS(on) in the industry This 40 V normal-level power MOSFET comes in our latest... | |
| OptiMOS™ 6 40 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on) This 40 V normal-level power MOSFET comes in our latest innovative, compact clip-based... | |
| The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses... |
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