Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3706STRRPBF IRF3706STRRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 040679-IRF3706STRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 88W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 77A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2410pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 800

MOSFET N-CH 20V 77A D2PAK Product overview: IRF3706STRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 77A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 77A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRF3706STRRPBF can be used for catalog matching and distributor lookup.