MOSFET N-CH 150V 23A TO220AB
N-Channel 150V 23A (Tc) 94W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017423-IRF3315PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 70 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
MOSFET N-CH 150V 23A TO220AB Product overview: IRF3315PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3315PBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 150V, 27A, TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.07ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 150V 23A TO220AB
N CHANNEL MOSFET, 150V, 27A, TO-220AB, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:150V, CONTINUOUS DRAIN CURRENT ID:27A, ON RESISTANCE RDS(ON):0.07OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
INFINEON Semiconductors IRF3315PBF
MOSFET MOSFT 150V 21A 70mOhm 63.3nC
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF3315PBF | IRF3315PBF-ND | 017423-IRF3315PBF | 278-IRF3315PBF | 63J7243 | IRF3315PBF | 66776806 | IRF3315PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3315PBF | 150V 23A MOSFET Transistor | N Channel Mosfet, 150V, 27A, To-220Ab; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | |||||
| IDSS | 23000 milliamps | 27000 milliamps | ||||||
| PD | 94000 milliwatts | 94000 milliwatts | 94000 milliwatts |
