Manufacturer: Infineon Technologies
Win Source Part Number: 017420-IRF2807ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 53A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
N-Channel 75V 75A (Tc) 170W (Tc) Through Hole TO-220AB
MOSFET N-CH 75V 75A TO220AB Product overview: IRF2807ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2807ZPBF can be used for catalog matching and distributor lookup.
INTERNATIONAL RECTIFIER, IRF2807ZPBF, MOSFET TRANSISTOR, 89A, 9.4OHM,10V. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg
MOSFET N-CH 75V 75A TO220AB
MOSFET Transistor, N Channel, 89 A, 75 V, 9.4 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET MOSFT 75V 89A 9.4mOhm 71nC
MOSFET N-CH 75V 75A TO220AB
MOSFET N-CH 75V 75A TO-220AB
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Radwell International | Allied Electronics, Inc. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017420-IRF2807ZPBF | IRF2807ZPBF-ND | 278-IRF2807ZPBF | 2626726P | 17378174 | 70017247 | IRF2807ZPBF | 38K2765 | IRF2807ZPBF | IRF2807ZPBF | 376-IRF2807ZPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2807ZPBF | Single FETs, MOSFETs | 75V 75A MOSFET Transistor | MOSFETs | Transistor | MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 89 A, 75 V, 9.4 Mohm, 10 V, 4 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 75V 75A TO-220AB |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | 75 volts | 75 volts | ||||||
| PD | 170000 milliwatts | 170 milliwatts | 170000 milliwatts | 170000 milliwatts | 170000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220; TO-220 | TO-220 | TO-220; TO-220-3 | TO-3 | 3270 pF @ 25 V |
