Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3305PBF IRF3305PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 083693-IRF3305PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-220AB

MOSFET N-CH 55V 75A TO220AB Product overview: IRF3305PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3305PBF can be used for catalog matching and distributor lookup.