MOSFET N-CH 150V 43A TO220AB
MOSFET N-Channel 150V 43A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069264-IRF3415PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET N-CH 150V 43A TO220AB
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
N CHANNEL MOSFET, 150V, 43A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET MOSFT 150V 43A 42mOhm 133.3nC
150V 43A 42mΩ@10V,22A 200W 4V@250uA N Channel TO-220AB MOSFETs ROHS
N CHANNEL MOSFET, 150V, 43A, TO-220AB, ON RESISTANCE RDS(ON):0.042OHM, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 150V, 43A, TO-220AB; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:43A; DRAIN SOURCE VOLTAGE VDS:150V; ON RESISTANCE RD. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF3415PBF | 5429232 | 5429232P | 069264-IRF3415PBF | IRF3415PBF-ND | IRF3415PBF | 70016954 | 63J7246 | IRF3415PBF | IRF3415PBF | 66776810 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3415PBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V | N Channel Mosfet, 150V, 43A, To-220Ab; Channel Type Infineon | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | 150 volts | |||||||
| IDSS | 43000 milliamps | 43000 milliamps | |||||||||
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts |
