The N-Channel MOSFET, part number 12AC9745, features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of 192A at a case temperature of 25¬8C. It has a maximum power dissipation of 441W and operates effectively at junction temperatures up to 175¬8C. The device exhibits a low on-resistance (Rds(on)) of 3.5mOc typical and 4.2mOc maximum at a gate-source voltage (Vgs) of 10V, which contributes to its efficiency in power applications. This MOSFET is suitable for a variety of applications including brushed and BLDC motor drives, battery-powered circuits, and DC/DC converters. It is designed with enhanced ruggedness against gate, avalanche, and dynamic dV/dt conditions, making it reliable for demanding environments. The product is RoHS compliant and features a lead-free and halogen-free construction, aligning with modern environmental standards. Engineers considering this MOSFET for their projects will find it beneficial for high-current applications requiring robust performance and thermal management.
N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 192A TO220AB Product overview: IRF100B201 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 192A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 192A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF100B201 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1186862-IRF100B201
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRF100B201
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 441W
Alternative Parts (Cross-Reference): TSM160N10CZ C0; BUK956R1-100E; BUK755R4-100E;
Introduction Date: March 26, 2015
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 192A
Rds On (Maximum) at Id, Vgs: 4.2mOhm at 115A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 255nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9500pF at 50V
MOSFET N-CH 100V 192A TO220AB
MOSFET N-CH 100V 192A TO220AB
MOSFET, N-CH, 100V, 192A, 175DEG C, 441W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:192A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
100V 192A 441W 4.2mΩ@10V,115A 4V@250uA N Channel TO-220AB MOSFETs ROHS
| DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF100B201-ND | 2579266P | 278-IRF100B201 | 1186862-IRF100B201 | IRF100B201 | IRF100B201 | 12AC9745 | IRF100B201 | IRF100B201 |
| Product Name | Single FETs, MOSFETs | MOSFETs | 100V 192A MOSFET Transistor | Electronic Surplus - IRF100B201 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 192A, 175Deg C, 441W; Channel Type Infineon | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220 | Tube | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-220 | |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | |||||
| Transconductance | 0.2780 kS |
