N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 083854-IRF1310NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 1900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 36 mOhm @ 22A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
MOSFET N-CH 100V 42A TO220AB Product overview: IRF1310NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1310NPBF can be used for catalog matching and distributor lookup.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
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MOSFET N-CH 100V 42A TO220AB
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POWER FIELD-EFFECT TRANSISTOR, 42A, 100V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 42A, 100V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:170W; RoHS Compliant: Yes
| RS Components, Ltd. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 5411506 | IRF1310NPBF-ND | 083854-IRF1310NPBF | 278-IRF1310NPBF | 70016939 | IRF1310NPBF | IRF1310NPBF | IRF1310NPBF | 66776674 | 97K2081 |
| Product Name | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1310NPBF | 100V 42A MOSFET Transistor | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, N, To-220; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Package Type | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| Number of units in IC | 1 | |||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts |
