Infineon Technologies AG Single FETs, MOSFETs IRF3205ZL

Description
N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-262
Request a Quote Datasheet
Description
N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-262
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF3205ZL-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3205ZL-ND
Single FETs, MOSFETs IRF3205ZL-ND
N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-262

N-Channel 55V 75A (Tc) 170W (Tc) Through Hole TO-262

Buy Now Datasheet
FETs - Single - IRF3205ZL - 1186957-IRF3205ZL - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF3205ZL
1186957-IRF3205ZL
FETs - Single - IRF3205ZL 1186957-IRF3205ZL
Manufacturer: Infineon Technologies Win Source Part Number: 1186957-IRF3205ZL Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 170W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 75A Rds On (Maximum) at Id, Vgs: 6.5mOhm at 66A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1186957-IRF3205ZL
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 170W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 75A
Rds On (Maximum) at Id, Vgs: 6.5mOhm at 66A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3450pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3205ZL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3205ZL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3205ZL
MOSFET N-CH 55V 75A TO262

MOSFET N-CH 55V 75A TO262

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF3205ZL-ND 1186957-IRF3205ZL IRF3205ZL
Product Name Single FETs, MOSFETs FETs - Single - IRF3205ZL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 55 volts
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