N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017421-IRF3205PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: IRF3205
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 146nC @ 10V
Max Input Capacitance: 3247pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 62A, 10V
Alternative Parts (Cross-Reference): BUK7511-55A,127; BUK9511-55A,127; BUK9510-55A,127;
Introduction Date: October 31, 2003
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET N-Channel 55V 110A HEXFET TO220AB
IRF3205 - 12V-300V N-CHANNEL POW
MOSFET N-CH 55V 110A TO220AB
N CHANNEL MOSFET, 55V, 110A, TO-220AB; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:110A; DRAIN SOURCE VOLTAGE VDS:55V; ON RESISTANCE RD. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 55V, 110A, TO-220AB, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:55V, CONTINUOUS DRAIN CURRENT ID:110A, ON RESISTANCE RDS(ON):0.008OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 55V 110A TO220AB
MOSFET MOSFT 55V 98A 8mOhm 97.3nC
55V 110A 8mΩ@10V,62A 200W 4V@250uA N Channel TO-220AB MOSFETs ROHS
N CHANNEL MOSFET, 55V, 110A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S
| DigiKey | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF3205PBF-ND | 017421-IRF3205PBF | 5409783 | IRF3205PBF | 17356500 | IRF3205PBF | IRF3205PBF | IRF3205PBF | 63J7236 | 70016950 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205PBF | MOSFETs | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | N Channel Mosfet, 55V, 110A, To-220Ab; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; To-220ab | TO-220; TO-220-3 | 3247 pF @ 25 V | TO-220 | TO-3; TO-220 | TO-220 | ||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | ||||||
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
