N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-262
Manufacturer: Infineon Technologies
Win Source Part Number: 1046438-IRF3205LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 146nC @ 10V
Max Input Capacitance: 3247pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 62A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
MOSFET N-CH 55V 110A TO262 Product overview: IRF3205LPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3205LPBF can be used for catalog matching and distributor lookup.
MOSFET MOSFT 55V 110A 8mOhm 97.3nC
MOSFET N-CH 55V 110A TO262
MOSFET N-CH 55V 110A TO262
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF3205LPBF-ND | 1046438-IRF3205LPBF | 278-IRF3205LPBF | IRF3205LPBF | IRF3205LPBF | IRF3205LPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3205LPBF | 55V 110A MOSFET Transistor | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262 | Tube | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| V(BR)DSS | 55 volts | 55 volts | 55 volts | |||
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
