Infineon Technologies AG Single FETs, MOSFETs IRF2204PBF

Description
MOSFET N-CH 40V 210A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 40V 210A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF2204PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF2204PBF
Single FETs, MOSFETs IRF2204PBF
MOSFET N-CH 40V 210A TO220AB

MOSFET N-CH 40V 210A TO220AB

Supplier's Site Datasheet
Singapore
40V 210A MOSFET Transistor
278-IRF2204PBF
40V 210A MOSFET Transistor 278-IRF2204PBF
MOSFET N-CH 40V 210A TO220AB Product overview: IRF2204PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 210A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2204PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 210A TO220AB Product overview: IRF2204PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 210A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF2204PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2626722 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626722
MOSFETs 2626722
Infineon MOSFET IRF2204PBF

Infineon MOSFET IRF2204PBF

Supplier's Site
MOSFETs - 2626722P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626722P
MOSFETs 2626722P
Infineon MOSFET IRF2204PBF

Infineon MOSFET IRF2204PBF

Supplier's Site
MOSFETs - 2626721 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626721
MOSFETs 2626721
Infineon MOSFET IRF2204PBF

Infineon MOSFET IRF2204PBF

Supplier's Site
Single FETs, MOSFETs - IRF2204PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF2204PBF-ND
Single FETs, MOSFETs IRF2204PBF-ND
N-Channel 40V 210A (Tc) 330W (Tc) Through Hole TO-220AB

N-Channel 40V 210A (Tc) 330W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204PBF - 040675-IRF2204PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204PBF
040675-IRF2204PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204PBF 040675-IRF2204PBF
Manufacturer: Infineon Technologies Win Source Part Number: 040675-IRF2204PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 210A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5890pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 130A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 040675-IRF2204PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 210A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 5890pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 130A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF2204PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF2204PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF2204PBF
MOSFET N-CH 40V 210A TO220AB

MOSFET N-CH 40V 210A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 40V 210A 3.6mOhm 130nC

MOSFET MOSFT 40V 210A 3.6mOhm 130nC

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. RS Components, Ltd. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRF2204PBF 278-IRF2204PBF 2626722 IRF2204PBF-ND 040675-IRF2204PBF IRF2204PBF IRF2204PBF
Product Name Single FETs, MOSFETs 40V 210A MOSFET Transistor MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF2204PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 210000 milliamps
PD 330000 milliwatts 330 milliwatts 330000 milliwatts
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