N-Channel 60V 79A (Tc) 110W (Tc) Through Hole TO-220AB
MOSFET N-Channel 60V 79A HEXFET TO220AB
MOSFET N-Channel 60V 79A HEXFET TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069238-IRF1018EPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: IRF1018E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 79A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 2290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 47A, 10V
Alternative Parts (Cross-Reference): NP80N06MLG-S18-AY; FDP5645; BUK9515-60E,127;
Introduction Date: February 28, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 79A TO220AB Product overview: IRF1018EPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 79A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 79A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF1018EPBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 60V, 79A TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:79A; On Resistance Rds(on):0.0071ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:-RoHS Compliant: Yes
MOSFET N-CH 60V 79A TO220AB
MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
| DigiKey | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF1018EPBF-ND | 6886800 | 069238-IRF1018EPBF | 278-IRF1018EPBF | 08N6374 | IRF1018EPBF | IRF1018EPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1018EPBF | 60V 79A MOSFET Transistor | N Channel Mosfet, 60V, 79A To-220Ab; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; SOT3; TO-220AB | Tube | TO-3; TO-220 | TO-220; TO-220-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| Number of units in IC | 1 | ||||||
| V(BR)DSS | 60 volts | 60 volts |
