Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3707ZPBF IRF3707ZPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 040680-IRF3707ZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Family Name: IRF3707 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 2.25V @ 25μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1210pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): FDP6030L; FDP7030BLS; NTP4302G; FDP6035AL-NL; Introduction Date: May 28, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 040680-IRF3707ZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Family Name: IRF3707 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 2.25V @ 25μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1210pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): FDP6030L; FDP7030BLS; NTP4302G; FDP6035AL-NL; Introduction Date: May 28, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial
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Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3707ZPBF
040680-IRF3707ZPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3707ZPBF 040680-IRF3707ZPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040680-IRF3707ZPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Family Name: IRF3707 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 2.25V @ 25μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1210pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): FDP6030L; FDP7030BLS; NTP4302G; FDP6035AL-NL; Introduction Date: May 28, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 040680-IRF3707ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Family Name: IRF3707
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 25μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1210pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): FDP6030L; FDP7030BLS; NTP4302G; FDP6035AL-NL;
Introduction Date: May 28, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - IRF3707ZPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF3707ZPBF-ND
Single FETs, MOSFETs IRF3707ZPBF-ND
N-Channel 30V 59A (Tc) 57W (Tc) Through Hole TO-220AB

N-Channel 30V 59A (Tc) 57W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF3707ZPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF3707ZPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF3707ZPBF
MOSFET N-CH 30V 59A TO220AB

MOSFET N-CH 30V 59A TO220AB

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 040680-IRF3707ZPBF IRF3707ZPBF-ND IRF3707ZPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3707ZPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 57000 milliwatts
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