Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF3709SPBF IRF3709SPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046473-IRF3709SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 41nC @ 5V
Max Input Capacitance: 2672pF @ 16V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

N-Channel MOSFET, 30V, 90A, 9mR, D2PAK, Surface Mount Product overview: IRF3709SPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF3709SPBF can be used for catalog matching and distributor lookup.

N-Channel 30V 90A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK