Nexperia B.V. Datasheets for Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| An NPN/PNP matched pair transistor in a SOT143B plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications General purpose switching and... | |
| Features and benefits High current Three current gain selections 1.4 W total power dissipation Medium power SMD plastic package Applications Linear voltage regulators High-side switches Supply line switches MOSFET drivers... | |
| Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Features and benefits Low VCEsat (BISS) and resistor-equipped transistor in one package Low 'threshold' voltage (< 1... | |
| NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 Features and benefits Medium current of 500 mA Low voltage of 60 V High... | |
| NPN Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 Features and benefits Medium current of 500 mA Low voltage of 30 V High DC... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST60 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST61 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| NPN Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BST62 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP61 Features and benefits High current of 1 A Low voltage of 60 V Integrated diode and... | |
| NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP62 Features and benefits High current of 1 A Low voltage of 80 V Integrated diode and... | |
| NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs AEC-Q101 qualified... | |
| NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 and 6 V). AEC-Q101 qualified... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 32 V) AEC-Q101 qualified Applications General purpose... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications General purpose... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according to AEC-Q101 and... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71H-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71H Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71J Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71K-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Qualified according... | |
| NPN general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX71K Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors Small SMD plastic package Two different current gain selections AEC-Q101 qualified Applications... | |
| NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H. Features and benefits High current AEC-Q101 qualified Applications General-purpose switching and amplification | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C-Q Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD42C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A Features and benefits High thermal power dissipation capability High energy efficiency... | |
| NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low... | |
| NPN high-voltage low VCEsat in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| NPN high-voltage low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits High voltage Low... | |
| NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9215Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current... | |
| NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| NPN high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115TLH Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High... | |
| NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z Features and benefits Low collector-emitter saturation voltage VCEsat High... | |
| NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z Features and benefits Low collector-emitter saturation voltage VCEsat High... | |
| NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X Features and benefits High voltage Low collector-emitter... | |
| NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X Features and benefits High voltage Low collector-emitter... | |
| NPN high-voltage transistor in a small SOT23 plastic package. PNP complements: BF823. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications Telephony and professional communication... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications Telephony... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BSR20A Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General... | |
| NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBTA92 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Applications Switching and amplification Especially used... | |
| NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BF723 Features and benefits Low feedback capacitance Applications General purpose high voltage circuits | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 350 V) Applications General purpose... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BF621 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V)... | |
| NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BF623 Features and benefits Low current (max. 50 mA) High voltage (max. 250 V)... | |
| NPN high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications Telephony and... | |
| NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V. AEC-Q101 qualified Applications Medium frequency applications in thick and thin-film... | |
| NPN medium frequency transistor in a SOT23 plastic package. Features and benefits IC(max) =25 mA VCEO(max) =20 V Very low feedback capacitance (typ. 350 fF). AEC-Q101 qualified Applications... | |
| NPN medium frequency transistor in a SOT23 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications AM mixers IF amplifiers in... | |
| NPN medium frequency transistor in a SOT323 (SC-70) plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 20 V). Very low feedback capacitance (typ. 350 fF). | |
| NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69. Features and benefits High current Two current gain selections High power dissipation capability AEC-Q101 qualified... | |
| NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complements: BSP31; BSP32 and BSP33. Features and benefits High current High power dissipation capability AEC-Q101 qualified Applications... | |
| NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink... | |
| NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| NPN Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit... | |
| NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies... | |
| NPN small-signal Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BCV28 Features and benefits High current (max. 500 mA) Low voltage (max. 30... | |
| NPN small-signal Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: BCV48 Features and benefits High current (max. 500 mA) Low voltage (max. 60... | |
| NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: MMBT3906 Features and benefits Collector current capability IC = 200 mA Collector-emitter voltage VCEO... | |
| NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. Features and benefits High current (max. 800 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching... | |
| NPN switching transistor in a SOT23 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 12 V). AEC-Q101 qualified Applications High speed saturated switching applications, especially... | |
| NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching and linear... | |
| NPN transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 60 V) Applications General purpose switching and... | |
| NPN transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 60 V) Qualified according to AEC-Q101 and... | |
| NPN transistor in a SOT23 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 15 V) Low feedback capacitance (max. 2.2 pF). AEC-Q101 qualified Applications Monitors... | |
| NPN transistor in a SOT23 plastic package. PNP complement: BCX17. Features and benefits High current (500 mA) Low voltage (45 V). AEC-Q101 qualified Applications General purpose amplification Saturated switching and... | |
| NPN transistor in a SOT23 plastic package. PNP complements: BCW69 and BCW70. Features and benefits Low current (100 mA) Low voltage (45 V) Low noise. AEC-Q101 qualified Applications General purpose... | |
| NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30. Features and benefits Low current (100 mA) Low voltage (32 V). AEC-Q101 qualified Applications General purpose switching and... | |
| NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors... | |
| NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors... | |
| NPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistor High current Reduces component count on Printed-Circuit Board (PCB) Reduces pick and... | |
| NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors... | |
| NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors... | |
| PNP Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: BCV47 Features and benefits High current High current gain Applications For general AF applications and... | |
| PNP Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCV47 Features and benefits High current High current gain AEC-Q101 qualified Applications For general AF applications... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV29 Features and benefits Very high DC current gain (min. 20000) High current (max. | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV49 Features and benefits Very high DC current gain (min. 10000) High current (max. | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST50 Features and benefits Integrated diode and resistor Applications Industrial switching applications such as:... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST51 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BST52 Features and benefits Integrated diode and resistor AEC-Q101 qualified Applications Industrial switching applications... | |
| PNP Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BSP52 Features and benefits High current of -1 A Low voltage of -80 V Integrated diode and... | |
| PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 and 6 V). AEC-Q101 qualified... | |
| PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pair. AEC-Q101 qualified... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications General purpose... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19-Q Features and benefits High current (max. 500 mA) Low voltage (max. 25 V) Qualified according... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19-Q Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) Qualified according... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 25 V) AEC-Q101 qualified... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) AEC-Q101 qualified... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70H-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70H Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70J Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70K-Q Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70K Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise... | |
| PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H. Features and benefits High current AEC-Q101 qualified Applications General-purpose switching and amplification | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C-Q Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A Features and benefits High thermal power dissipation capability High energy efficiency... | |
| PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation... | |
| PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector... | |
| PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8140Z Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8560Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| PNP high-voltage low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High... | |
| PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| PNP high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z Features and benefits High voltage Low collector-emitter saturation voltage V... | |
| PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T-Q. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| PNP high-voltage low VCEsat transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T Features and benefits High voltage Low collector-emitter saturation voltage VCEsat... | |
| PNP high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High... | |
| PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter... | |
| PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) small and flat Surface-Mounted Device (SMD) plastic package. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High... | |
| PNP high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BF722 Features and benefits Low feedback capacitance Applications General purpose high voltage circuits | |
| PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) High voltage (max. 100 V) Applications High-voltage general purpose Switching... | |
| PNP high-voltage transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: MMBTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) AEC-Q101 qualified... | |
| PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BF620 Features and benefits Low current (max. -50 mA) High voltage (max. -300 V)... | |
| PNP high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BF622 Features and benefits Low current (max. -50 mA) High voltage (max. -250 V)... | |
| PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Features and benefits... | |
| PNP medium frequency transistor in a SOT23 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications RF stages in FM front-ends... | |
| PNP medium frequency transistor in a SOT23 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Medium frequency applications in thick... | |
| PNP medium frequency transistor in a SOT323 plastic package. Features and benefits Low current (max. 25 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications RF stages in FM front-ends... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and... | |
| PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink... | |
| PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain... | |
| PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit... | |
| PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies... | |
| PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: BSR14 Features and benefits Single general-purpose switching transistor AEC-Q101 qualified Applications Switching and linear amplification... | |
| PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 60 V) Qualified according to AEC-Q101 and... | |
| PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: MMBT3904 Features and benefits Collector current capability IC = -200 mA Collector-emitter voltage VCEO... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 60 V) AEC-Q101 qualified Applications General purpose switching... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BF820 and BF822 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) Applications... | |
| PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BF820 and BF822 Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) AEC-Q101... | |
| PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. Features and benefits Low current (max. 100 mA) Low voltage (max. 32 V). AEC-Q101 qualified Applications General purpose... | |
| PNP transistor in a SOT23 plastic package. NPN complement: BCW60. Features and benefits Low current (max. 100 mA) Low voltage (max. 32 V). AEC-Q101 qualified Applications General purpose switching and... | |
| PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors... |
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