Nexperia B.V. 80 V, 1 A NPN medium power transistors BCP56TX

Description
NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - PNP complement Nexperia - JEDEC BCP56T SOT223 SC-73 BCP53T BCP56-10T BCP53-10T BCP56-16T BCP53-16T Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability Applications Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers
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Description
NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - PNP complement Nexperia - JEDEC BCP56T SOT223 SC-73 BCP53T BCP56-10T BCP53-10T BCP56-16T BCP53-16T Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability Applications Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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NPN medium power transistors in a SOT223 (SC-73) surface-mounted plastic package, rated for a collector-emitter voltage of 80 V and a continuous collector current of 1 A, with a peak collector current capability of 2 A for pulses up to 1 ms. The devices offer three current gain selections and a maximum power dissipation of 1.8 W with a 4-layer PCB and 1 cm² collector pad. The junction temperature ranges from -55 °C to 150 °C, and the package has a thermal resistance from junction to ambient of 70 K/W under optimal mounting conditions. The transistors meet IEC 60134 absolute maximum rating standards and are not automotive qualified.

Datasheet Summary
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NPN medium power transistors in a SOT223 (SC-73) surface-mounted plastic package, rated for a collector-emitter voltage of 80 V and a continuous collector current of 1 A, with a peak collector current capability of 2 A for pulses up to 1 ms. The devices offer three current gain selections and a maximum power dissipation of 1.8 W with a 4-layer PCB and 1 cm² collector pad. The junction temperature ranges from -55 °C to 150 °C, and the package has a thermal resistance from junction to ambient of 70 K/W under optimal mounting conditions. The transistors meet IEC 60134 absolute maximum rating standards and are not automotive qualified.

Suppliers

Company
Product
Description
Supplier Links
80 V, 1 A NPN medium power transistors - BCP56TX - Nexperia B.V.
Nijmegen, Netherlands
80 V, 1 A NPN medium power transistors
BCP56TX
80 V, 1 A NPN medium power transistors BCP56TX
NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - Package - PNP complement Nexperia - JEDEC BCP56T SOT223 SC-73 BCP53T BCP56-10T BCP53-10T BCP56-16T BCP53-16T Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability Applications Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers

NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package.

Table 1.Product overview

Type number

-

Package

-

PNP complement

Nexperia

-

JEDEC

BCP56T

SOT223

SC-73

BCP53T

BCP56-10T

BCP53-10T

BCP56-16T

BCP53-16T

Features and benefits

  • High collector current capability IC and ICM
  • Three current gain selections
  • High power dissipation capability

Applications

  • Linear voltage regulators
  • MOSFET drivers
  • High-side switches
  • Power management
  • Amplifiers
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325619-BCP56TX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1325619-BCP56TX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1325619-BCP56TX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1325619-BCP56TX Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 1.8 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 Temperature Range - Operating: 150°C (TJ) Case / Package: TO-261-4, TO-261AA Fake Threat In the Open Market: 71 REACH Status: Vendor Undefined Other Part Number: 2156-BCP56TX-1727 Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325619-BCP56TX
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Bulk
Standard Package: 1
Mounting: Surface Mount
Power - Max: 1.8 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-261-4, TO-261AA
Fake Threat In the Open Market: 71
REACH Status: Vendor Undefined
Other Part Number: 2156-BCP56TX-1727
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now
Singapore, Singapore
80 V 1 A Bipolar Transistor
276-BCP56TX
80 V 1 A Bipolar Transistor 276-BCP56TX
BCP56T Series - 80 V, 1 A NPN medium power transistors SC-73 4-Pin Product overview: BCP56TX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 80 V, 1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCP56TX can be used for catalog matching and distributor lookup.

BCP56T Series - 80 V, 1 A NPN medium power transistors SC-73 4-Pin Product overview: BCP56TX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80 V, 1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 80 V, 1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCP56TX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BCP56TX - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2536-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2536-1-ND
Single Bipolar Transistors 1727-2536-1-ND
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Surface Mount SOT-223

Buy Now Datasheet
Single Bipolar Transistors - 1727-2536-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2536-2-ND
Single Bipolar Transistors 1727-2536-2-ND
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Surface Mount SOT-223

Buy Now Datasheet
Single Bipolar Transistors - 1727-2536-6-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2536-6-ND
Single Bipolar Transistors 1727-2536-6-ND
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.8W Surface Mount SOT-223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCP56TX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCP56TX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCP56TX
TRANS NPN 80V 1A SOT223

TRANS NPN 80V 1A SOT223

Supplier's Site
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia - 98Y2101 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia
98Y2101
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia 98Y2101
TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:40hFE; Transistor CaseRoHS Compliant: Yes

TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:40hFE; Transistor CaseRoHS Compliant: Yes

Supplier's Site Datasheet
Single Bipolar Transistors - BCP56TX - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BCP56TX
Single Bipolar Transistors BCP56TX
TRANS NPN 80V 1A SOT223

TRANS NPN 80V 1A SOT223

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCP56TX
Bipolar Transistors - BJT BCP56TX
Bipolar Transistors - BJT BCP56T/SC-73/REEL 7" Q1/T1 *ST

Bipolar Transistors - BJT BCP56T/SC-73/REEL 7" Q1/T1 *ST

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
BCP56TX
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT BCP56TX
80V 1.8W 63@150mA,2V 1A NPN SOT-223-3 Bipolar Transistors - BJT ROHS

80V 1.8W 63@150mA,2V 1A NPN SOT-223-3 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BCP56TX 1325619-BCP56TX 276-BCP56TX BCP56TX 1727-2536-1-ND BCP56TX 98Y2101 BCP56TX BCP56TX BCP56TX
Product Name 80 V, 1 A NPN medium power transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 80 V 1 A Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia Single Bipolar Transistors Bipolar Transistors - BJT Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Package Type SOT223; SOT223 SOT223 SOT3; TO-261-4, TO-261AA SOT223 SOT223; TO-261-4, TO-261AA AEC-Q101 TO-3 SOT223; TO-261-4, TO-261AA SOT223
Polarity NPN NPN NPN NPN; NPN NPN
Packing Method Bulk; Bulk Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 1000 milliamps 1000 milliamps 1000 milliamps 1000 milliamps 1000 milliamps
Power Gain 63 dB
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