NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD32C
Features and benefits
Applications
TRANS NPN 100V 3A DPAK Product overview: MJD31CJ from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD31CJ can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.6W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.6W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.6W Surface Mount DPAK
Win Source Part Number: 1377145-MJD31CJ
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Product Number: MJD31
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 3MHz
Power - Max: 1.6 W
TRANS NPN 100V 3A DPAK
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
TRANS NPN 100V 3A DPAK
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJD31CJ | 276-MJD31CJ | 1727-8670-6-ND | 1377145-MJD31CJ | MJD31CJ | 29AK0899 | MJD31CJ |
| Product Name | 100 V, 3 A NPN high power bipolar transistor | 100V 3A DPAK Bipolar Transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar Rohs Compliant Nexperia | Single Bipolar Transistors |
| VCEO | 100 volts | 100 volts | 100 volts | 100 volts | |||
| IC(max) | 3 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | |||
| PD | 15 milliwatts | 15 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | SOT428C SOT428C | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3 | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
