20 V PNP BISS loadswitch combining a PNP transistor and NPN resistor-equipped transistor in a SOT457 (SC-74) surface-mount package with six leads. The device has a collector-emitter voltage rating of 20 V for the PNP transistor and 50 V for the NPN transistor, with a maximum collector current of 1 A for the PNP and 100 mA for the NPN. The PNP transistor exhibits a collector-emitter saturation voltage as low as 185 mV at 1 A collector current and 100 mA base current. The NPN transistor features a bias resistor R1 of 3.3 to 6.1 kΩ and a R2/R1 bias resistor ratio of 0.8 to 1.2. Total power dissipation is rated up to 400 mW when mounted on a ceramic PCB. The device meets IEC 60134 absolute maximum rating standards and is qualified for operation from -65 °C to 150 °C ambient and junction temperatures.
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package.
Features and benefits
Applications
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 1A 185MHz 600mW Surface Mount 6-TSOP
BIPOLAR ARRAY, NPN/PNP, 20V, 1A, SC74 ROHS COMPLIANT: YES
TRANS PREBIAS 1NPN 1PNP 6TSOP
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBLS2002D,115 | 1727-5691-2-ND | 74AH1004 | PBLS2002D,115 |
| Product Name | 20 V PNP BISS loadswitch | Bipolar Transistor Arrays, Pre-Biased | Bipolar Array, Npn/pnp, 20V, 1A, Sc74 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT457 SOT457 | SC-74, SOT-457 | TO-3 |
