PNP medium power transistor in a SOT89 surface-mounted plastic package measuring 4.5 mm x 2.5 mm x 1.5 mm, with an exposed heatsink for improved thermal and electrical conductivity. It has a collector-emitter voltage rating of -60 V, a continuous collector current of -1 A, and a peak collector current of -2 A. Total power dissipation is 1.35 W at 25 °C ambient temperature. The junction temperature range is -65 °C to 150 °C. Thermal resistance from junction to ambient is 93 K/W when mounted on an FR4 PCB with a 6 cm² collector pad. The NPN complement is BSR41.
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.
NPN complement: BSR41
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 60V 1A 100MHz 1.35W Surface Mount SOT-89
TRANS PNP 60V 1A SOT89
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BSR31,135 | 1727-BSR31,135TR-ND | BSR31,135 | 28AK6523 |
| Product Name | 60 V, 1 A PNP medium power transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar Rohs Compliant Nexperia |
| Package Type | SOT89; SOT89 SOT89 | SOT89; TO-243AA | AEC-Q100 | TO-3 |
| Polarity | PNP | |||
| Transistor Grade / Operating Range | Automotive |