PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) surface-mounted plastic package, rated for a collector-emitter voltage of -80 V and a continuous collector current of -8 A, with a peak collector current of -16 A for pulses up to 1 ms. It has a maximum total power dissipation of 20 W at the mounting base and 1.75 W on a standard FR4 PCB with a 1 cm² collector pad. The junction temperature reaches up to 150 °C, and the device is AEC-Q101 qualified for automotive applications. Thermal resistance from junction to mounting base is 6.25 K/W and to ambient is 72 K/W under specified PCB conditions.
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
NPN complement: MJD44H11A
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK
TRANS PNP 80V 8A DPAK
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJD45H11AJ | 1727-8687-1-ND | MJD45H11AJ | 29AK0908 |
| Product Name | 80 V, 8 A PNP high power bipolar transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar Rohs Compliant Nexperia |
| VCEO | -80 volts | 80 volts | ||
| IC(max) | -8 milliamps | 8000 milliamps | ||
| PD | 20 milliwatts | |||
| TJ | 150 C (302 F) |
