NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD45H11
Features and benefits
Applications
TRANS NPN 80V 8A DPAK
Win Source Part Number: 1001879-MJD44H11J
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-8673-6,1727-867
Base Product Number: MJD44H11
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
TRANS NPN 80V 8A DPAK Product overview: MJD44H11J from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MJD44H11J can be used for catalog matching and distributor lookup.
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
80V 1.75W 60@2A,1V 8A NPN DPAK Bipolar Transistors - BJT ROHS
TRANS NPN 80V 8A DPAK
| Nexperia B.V. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJD44H11J | MJD44H11J | 1001879-MJD44H11J | 1727-8673-2-ND | 276-MJD44H11J | 29AK0907 | MJD44H11J | MJD44H11J |
| Product Name | 80 V, 8 A NPN high power bipolar transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Single Bipolar Transistors | 80V 8A DPAK Bipolar Transistor | Transistor, Bipolar Rohs Compliant Nexperia | Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | NPN | ||
| hfe | 60 | 60 | ||||||
| VCEO | 80 volts | 80 volts | 80 volts | 80 volts | 80 volts | |||
| IC(max) | 8000 milliamps | 8000 milliamps | 8000 milliamps | 8000 milliamps | 8000 milliamps | 8000 milliamps | ||
| PD | 1750 milliwatts | 20 milliwatts | 1750 milliwatts |
