NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) surface-mounted plastic package, with a collector-emitter voltage rating of 100 V and a continuous collector current of 6 A. Peak collector current is 10 A for pulses up to 1 ms. Total power dissipation is 15 W at 25 °C on the mounting base, and 1.6 W on a single-sided FR4 PCB with a 1 cm² copper pad. Junction temperature is rated to 150 °C. PNP complement is MJD42C.
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD42C
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.6W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.6W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.6W Surface Mount DPAK
TRANS NPN 100V 6A DPAK
TRANSISTOR, BIPOLAR, NPN, 100V/6A/TO-252 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJD41CJ | 1727-MJD41CJTR-ND | MJD41CJ | 57AJ0135 |
| Product Name | 100 V, 6 A NPN high power bipolar transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar, Npn, 100V/6A/to-252 Rohs Compliant Nexperia |
| VCEO | 100 volts | 100 volts | ||
| IC(max) | 6 milliamps | 6000 milliamps | ||
| PD | 15 milliwatts | |||
| TJ | 150 C (302 F) |
