PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Features and benefits
Applications
BCW89 - PNP general purpose transistor TO-236 3-Pin Product overview: BCW89,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCW89,215 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 60V 100mA 150MHz 250mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 60V 100mA 150MHz 250mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 60V 100mA 150MHz 250mW Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 801213-BCW89,215
Packaging: Reel
Mounting Style: SMD
Power - Max: 250mW
Transistor Type: PNP
Frequency - Transition: 150MHz
Supplier Device Package: TO-236AB
Temperature Range - Operating: 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 150mV at 2.5mA, 50mA
Part Number Series: BCW89
DC Current Gain (hFE) (Min) at Ic, Vce: 120 at 2mA, 5V
TRANS PNP 60V 0.1A TO236AB
TRANS PNP 60V 0.1A TO236AB
TRANS, PNP, -60V, 150MHZ, SOT23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:150MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:260hFE; RF Transistor RoHS Compliant: Yes
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | BCW89,215 | 276-BCW89,215 | 1727-1579-2-ND | 801213-BCW89,215 | BCW89,215 | BCW89,215 | 82AC9892 |
| Product Name | 60 V, 100 mA PNP general purpose transistor | Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BCW89,215 | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Pnp, -60V, 150Mhz, Sot23-3; Transistor Polarity Nexperia |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | AEC-Q101 | TO-3 | |
| IC(max) | -100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | -60 volts | 60 volts | 60 volts | ||||
| PD | 250 milliwatts | ||||||
| TJ | 150 C (302 F) | 150 C (302 F) |
