Nexperia B.V. 600 V, 0.1 A NPN high-voltage low VCEsat transistor PBHV2160ZX

Description
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability High collector current gain hFE at high IC Applications Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS)
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Description
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability High collector current gain hFE at high IC Applications Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS)
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Datasheet
Datasheet Summary
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NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) surface-mounted package measuring 6.5 mm x 3.5 mm x 1.65 mm, rated for a collector-emitter voltage of 600 V and a collector current of 0.1 A, with a maximum total power dissipation of 1.4 W when mounted on a 6 cm⁲ PCB pad. The device operates with a junction temperature up to 150 °C and meets IEC 60134 for absolute maximum ratings. The PNP complement is PBHV3160Z.

Datasheet Summary
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NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) surface-mounted package measuring 6.5 mm x 3.5 mm x 1.65 mm, rated for a collector-emitter voltage of 600 V and a collector current of 0.1 A, with a maximum total power dissipation of 1.4 W when mounted on a 6 cm⁲ PCB pad. The device operates with a junction temperature up to 150 °C and meets IEC 60134 for absolute maximum ratings. The PNP complement is PBHV3160Z.

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Description
Supplier Links
600 V, 0.1 A NPN high-voltage low VCEsat transistor - PBHV2160ZX - Nexperia B.V.
Nijmegen, Netherlands
600 V, 0.1 A NPN high-voltage low VCEsat transistor
PBHV2160ZX
600 V, 0.1 A NPN high-voltage low VCEsat transistor PBHV2160ZX
NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability High collector current gain hFE at high IC Applications Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS)

NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV3160Z

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability
  • High collector current gain hFE at high IC

Applications

  • Electronic ballast for fluorecent lighting
  • LED driver for LED chain module
  • LCD backlighting
  • HID front lighting
  • Hook switch for wired telecom
  • Switch Mode Power Supply (SMPS)
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 972108-PBHV2160ZX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
972108-PBHV2160ZX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 972108-PBHV2160ZX
Win Source Part Number: 972108-PBHV2160ZX Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: Nexperia USA Inc. Other Names: 568-12664-6-ND,568-1 2664-1-ND,1727-2365- 6,568-12664-2-ND,172 7-2365-1,568-12664-1 ,1727-2365-2,568-126 64-2,934068593115,56 8-12664-6 Base Product Number: PBHV2160

Win Source Part Number: 972108-PBHV2160ZX
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Power - Max: 650 mW
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Nexperia USA Inc.
Other Names: 568-12664-6-ND,568-12664-1-ND,1727-2365-6,568-12664-2-ND,1727-2365-1,568-12664-1,1727-2365-2,568-12664-2,934068593115,568-12664-6
Base Product Number: PBHV2160

Buy Now Datasheet
Singapore, Singapore
600 V 0.1 A Bipolar Transistor
276-PBHV2160ZX
600 V 0.1 A Bipolar Transistor 276-PBHV2160ZX
PBHV2160Z - 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor SC-73 4-Pin Product overview: PBHV2160ZX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 0.1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 600 V, 0.1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBHV2160ZX can be used for catalog matching and distributor lookup.

PBHV2160Z - 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor SC-73 4-Pin Product overview: PBHV2160ZX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 0.1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 600 V, 0.1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBHV2160ZX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBHV2160ZXDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBHV2160ZXDKR-ND
Single Bipolar Transistors 1727-PBHV2160ZXDKR-ND
Bipolar (BJT) Transistor NPN 600V 100mA 650mW Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 600V 100mA 650mW Surface Mount SOT-223

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBHV2160ZXCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBHV2160ZXCT-ND
Single Bipolar Transistors 1727-PBHV2160ZXCT-ND
Bipolar (BJT) Transistor NPN 600V 100mA 650mW Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 600V 100mA 650mW Surface Mount SOT-223

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBHV2160ZXTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBHV2160ZXTR-ND
Single Bipolar Transistors 1727-PBHV2160ZXTR-ND
Bipolar (BJT) Transistor NPN 600V 100mA 650mW Surface Mount SOT-223

Bipolar (BJT) Transistor NPN 600V 100mA 650mW Surface Mount SOT-223

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBHV2160ZX
Bipolar Transistors - BJT PBHV2160ZX
Bipolar Transistors - BJT 0.1A NPN High- Voltage Transistor

Bipolar Transistors - BJT 0.1A NPN High- Voltage Transistor

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBHV2160ZX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBHV2160ZX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBHV2160ZX
TRANS NPN 600V 0.1A SOT223

TRANS NPN 600V 0.1A SOT223

Supplier's Site
Single Bipolar Transistors - PBHV2160ZX - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PBHV2160ZX
Single Bipolar Transistors PBHV2160ZX
TRANS NPN 600V 0.1A SOT223

TRANS NPN 600V 0.1A SOT223

Supplier's Site Datasheet
Transistor, Bipol, Npn, 600V, Sot-223-4; Transistor Polarity Nexperia - 82Y7113 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 600V, Sot-223-4; Transistor Polarity Nexperia
82Y7113
Transistor, Bipol, Npn, 600V, Sot-223-4; Transistor Polarity Nexperia 82Y7113
TRANSISTOR, BIPOL, NPN, 600V, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency ft:-; Power Dissipation Pd:650mW; DC Collector Current:100mA; DC Current Gain hFE:70hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 600V, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency ft:-; Power Dissipation Pd:650mW; DC Collector Current:100mA; DC Current Gain hFE:70hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
PBHV2160ZX
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT PBHV2160ZX
600V 650mW 70@10mA,10V 100mA NPN SOT-223 Bipolar Transistors - BJT ROHS

600V 650mW 70@10mA,10V 100mA NPN SOT-223 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company LCSC Electronics Technology (HK) Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number PBHV2160ZX 972108-PBHV2160ZX 276-PBHV2160ZX 1727-PBHV2160ZXDKR-ND PBHV2160ZX PBHV2160ZX PBHV2160ZX 82Y7113 PBHV2160ZX
Product Name 600 V, 0.1 A NPN high-voltage low VCEsat transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 600 V 0.1 A Bipolar Transistor Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors Transistor, Bipol, Npn, 600V, Sot-223-4; Transistor Polarity Nexperia Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Package Type SOT223; SOT223 SOT223 SOT3 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA TO-3; SOT223 SOT223
Polarity NPN NPN NPN; NPN NPN NPN
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps
Power Gain 70 dB
Output Power 0.6500 watts 0.6500 watts
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