NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) surface-mounted plastic package. Rated for a collector-emitter voltage of 80 V and a continuous collector current of 8 A, with a peak collector current of 16 A for pulses up to 1 ms. Total power dissipation is 20 W at a junction-to-mounting
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD45H11A
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK
TRANS NPN 80V 8A DPAK
TRANS NPN 80V 8A DPAK
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | MJD44H11AJ | 1727-8672-6-ND | MJD44H11AJ | MJD44H11AJ | 29AK0906 |
| Product Name | 80 V, 8 A NPN high power bipolar transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single Bipolar Transistors | Transistor, Bipolar Rohs Compliant Nexperia |
| VCEO | 80 volts | 80 volts | 80 volts | ||
| IC(max) | 8 milliamps | 8000 milliamps | 8000 milliamps | ||
| PD | 20 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||
| Package Type | SOT428C SOT428C | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | AEC-Q101 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3; TO-252 (DPAK) |
