PNP high voltage transistor in a SOT23 surface-mounted plastic package, rated for a collector-emitter voltage of up to -300 V and a collector current of up to -50 mA, with a maximum power dissipation of 250 mW and a junction temperature of 150 °C. The device has a DC current gain of at least 50 at -20 V and -25 mA, and a transition frequency of 60 MHz. Thermal resistance from junction to ambient is 500 K/W. NPN complements are BF820 and BF822. Applications include telephony and professional communication equipment.
PNP transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
NPN complements: BF820 and BF822
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 300V 50mA 60MHz 250mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 300V 50mA 60MHz 250mW Surface Mount TO-236AB
Bipolar (BJT) Transistor PNP 300V 50mA 60MHz 250mW Surface Mount TO-236AB
BF821; BF823 - PNP high voltage transistors TO-236 3-Pin Product overview: BF821,215 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BF821,215 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1139797-BF821,215
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 50 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Nexperia USA Inc.
Other Names: BF821 T/R-ND,568-6167-2-ND
Base Product Number: BF821
TRANS PNP 300V 0.05A TO236AB
Bipolar (BJT) Single Transistor, PNP, -300 V, 250 mW, -50 mA, 50 RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, PNP, -300 V, 60 MHz, 250 mW, -50 mA, 50 RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BF821,215 | 1727-4922-2-ND | 276-BF821,215 | 1139797-BF821,215 | BF821,215 | 96K6973 |
| Product Name | PNP high voltage transistor | Single Bipolar Transistors | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar (Bjt) Single Transistor, Pnp, -300 V, 250 Mw, -50 Ma, 50 Rohs Compliant Nexperia |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3 | AEC-Q101 | TO-3 | |
| Polarity | PNP | PNP | PNP | |||
| Transistor Grade / Operating Range | Automotive | |||||
| IC(max) | 50 milliamps | 50 milliamps | ||||
| Power Gain | 50 dB |
