Nexperia B.V. 80 V, 8 A PNP high power bipolar transistor MJD45H11J

Description
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement
  • 80 V, 8 A PNP high power bipolar transistor - MJD45H11J - Nexperia B.V.
    Nexperia B.V.
  • Transistor, Bipolar Rohs Compliant Nexperia - 29AK0909 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD45H11J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single Bipolar Transistors - MJD45H11J - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
80 V, 8 A PNP high power bipolar transistor - MJD45H11J - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
80 V, 8 A PNP high power bipolar transistor
MJD45H11J
80 V, 8 A PNP high power bipolar transistor MJD45H11J
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

NPN complement: MJD44H11

Features and benefits

  • High thermal power dissipation capability
  • High energy efficiency due to less heat generation
  • Electrically similar to popular MJD45H series
  • Low collector emitter saturation voltage
  • Fast switching speeds

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Constant current drive backlighting application
  • Motor drive
  • Relay replacement
Supplier's Site Datasheet
Transistor, Bipolar Rohs Compliant Nexperia - 29AK0909 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
29AK0909
Transistor, Bipolar Rohs Compliant Nexperia 29AK0909
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD45H11J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD45H11J
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD45H11J
TRANS PNP 80V 8A DPAK

TRANS PNP 80V 8A DPAK

Supplier's Site
Single Bipolar Transistors - MJD45H11J - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MJD45H11J
Single Bipolar Transistors MJD45H11J
TRANS PNP 80V 8A DPAK

TRANS PNP 80V 8A DPAK

Supplier's Site

Technical Specifications

  Nexperia B.V. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Power Bipolar Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number MJD45H11J 29AK0909 MJD45H11J MJD45H11J
Product Name 80 V, 8 A PNP high power bipolar transistor Transistor, Bipolar Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors
VCEO -80 volts 80 volts 80 volts
IC(max) -8 milliamps 8000 milliamps 8000 milliamps
PD 20 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT428C SOT428C TO-3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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