Infineon Technologies AG Datasheets for Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB =... | |
| High Speed 650 V, 40 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. Summary of... | |
| HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector... | |
| HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F =... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise... | |
| HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8... | |
| NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900... | |
| The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V,... |
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