Infineon Technologies AG Datasheets for Bipolar RF Transistors
Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB =... | |
| High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of... | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX55-16 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX68-25 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-10 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-25 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN18 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN19 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38 | |
| Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39 | |
| NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX41 (NPN) Pb-free (RoHS compliant) package Qualified according... | |
| NPN Silicon AF and Switching Transistor Summary of Features For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX42 (PNP) Pb-free (RoHS compliant) package Qualified according... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant)... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant)... | |
| NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP)... | |
| NPN Silicon RF Transistor for low current applications Summary of Features Low current device suitable e.g. for handhelds For high frequency oscillators e.g. DRO for LNB For ISM band applications... | |
| PNP Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Complementary types: BCW66... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q102 Potential Applications For general... | |
| PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN)... | |
| The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V,... |
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