Infineon Technologies AG Bipolar Transistors - BJT BCX 70H E6433

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Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
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NPN silicon bipolar transistors for audio frequency input stages and driver applications in SOT23 package, with a 45 V collector-emitter voltage rating, 100 mA continuous collector current, and 330 mW total power dissipation at 71 °C junction temperature. The BCX70H variant has a DC current gain (hFE) range of 200 to 310 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 250 MHz. The device is RoHS compliant and qualified to AEC-Q101 standards.

Datasheet Summary
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NPN silicon bipolar transistors for audio frequency input stages and driver applications in SOT23 package, with a 45 V collector-emitter voltage rating, 100 mA continuous collector current, and 330 mW total power dissipation at 71 °C junction temperature. The BCX70H variant has a DC current gain (hFE) range of 200 to 310 at 2 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 250 MHz. The device is RoHS compliant and qualified to AEC-Q101 standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX 70H E6433
Bipolar Transistors - BJT BCX 70H E6433
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCX 70H E6433
Product Name Bipolar Transistors - BJT
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